Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

180A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

200W Tc

Turn Off Delay Time  

36 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2003

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.7Ohm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

40V

Current Rating  

75A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

220W

Case Connection  

DRAIN

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.7m Ω @ 75A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

4340pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

150nC @ 10V

Rise Time  

110ns

Vgs (Max)  

±20V

Fall Time (Typ)  

58 ns

Continuous Drain Current (ID)  

190A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

40V

Pulsed Drain Current-Max (IDM)  

750A

Dual Supply Voltage  

40V

Avalanche Energy Rating (Eas)  

480 mJ

Recovery Time  

42 ns

Nominal Vgs  

4 V

Height  

8.77mm

Length  

10.54mm

Width  

4.69mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free